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MAX4959 Datasheet(PDF) 2 Page - Maxim Integrated Products

Part No. MAX4959
Description  High-Voltage OVP with Battery Switchover
Download  17 Pages
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Maker  MAXIM [Maxim Integrated Products]
Homepage  http://www.maxim-ic.com
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MAX4959 Datasheet(HTML) 2 Page - Maxim Integrated Products

 
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High-Voltage OVP with Battery Switchover
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VIN = +19V, TA = -40°C to +85°C, unless otherwise noted, CVDD = 100nF. Typical values are at TA = +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
IN, SOURCE1, GATE1, GATE2, to GND ................-0.3V to +30V
VDD to GND ..............................................................-0.3V to +6V
UVS, OVS, CB to GND .............................................-0.3V to +6V
Continuous Power Dissipation (TA = +70°C)
10-pin µDFN (derate 5.0mW/°C above +70°C) ...........403mW
10-pin µMAX (derate 5.6mW/°C above +70°C) ...........444mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
IN
Input Voltage Range
VIN
428
V
Overvoltage Adjustable Trip
Range
OVLO
(Note 2)
6
28
V
Overvoltage Comp Reference
OVREF
VIN rising edge
1.18
1.228
1.276
V
OVS Input Leakage Current
OVILKG
-100
+100
nA
Overvoltage Trip Hysteresis
OVHYS
1%
Undervoltage Adjustable Trip
Range
UVLO
(Note 2)
5
28
V
Undervoltage Comp Reference
UVREF
VIN falling edge
1.18
1.228
1.276
V
UVS Input Leakage Current
UVILKG
-100
+100
nA
Undervoltage Trip Hysteresis
UVHYS
1%
Internal Undervoltage Trip Level
INTUVREF
VIN falling edge
4.1
4.4
4.7
V
Internal Undervoltage Trip
Hysteresis
INTUVHYS
1%
Power-On Trip Level
POTL
VDD > +3V, IN rising edge
0.5
0.75
1
V
Power-On Trip Hysteresis
POTLHYS
10
%
IN Supply Current
IIN
VIN = +19V, VOVS < OVREF and
VUVS > UVREF
100
300
µA
VDD
VDD Voltage Range
VDD
2.7
5.5
V
VDD Undervoltage Lockout
VDDUVLO
VDD falling edge
1.55
2.40
V
VDD Undervoltage Lockout
Hysteresis
VDDUVLOHYS
50
mV
VDD Supply Current
IVDD
VDD = +5V, VIN = 0V
10
µA
GATE_
GATE1 Open-Drain MOS RON
Resistance
RON
VCB = 0V, VIN = 19V, VOVS < OVREF and
VUVS > UVREF, IGATE_ = 0.5mA (MAX4959)
1k
Ω
GATE2 Open-Drain MOS RON
Resistance
RON
VCB = 3V, IGATE_ = 0.5mA
1
k
Ω


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