GMA94 datasheet(1/2 Pages) GTM

Part #	GMA94

Description	PNP EPITAXIAL PLANAR TRANSISTOR

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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GMA94

1/2

ISSUED DATE :2005/03/25

REVISED DATE :

G

G M

M A

A9944

P

P N

N P

P E

E P

P II T

T A

A X

X II A

A LL P

P LL A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GMA94 is designed for application requires high voltage.

Features

&High voltage: VCEO=400V (min) at IC=1mA

&High current gain: IC=300mA at 25

&Complementary with GMA44

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature Range

TsTG

-55 ~ +150

Collector to Base Voltage

VCBO

-400

V

Collector to Emitter Voltage

VCEO

-400

V

Emitter to Base Voltage

VEBO

-6

V

Collect Current(DC)

IC

-500

mA

Total Power Dissipation

PD

1

W

Electrical Characteristics(Ta = 25 : )

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-400

-

V

IC=-100uA, IE=0

BVCEO

-400

-

V

IC=-1mA, IB=0

BVEBO

-6

-

V

IE=-100uA, IC=0

ICBO

-

-100

nA

VCB=-400V, IE=0

ICES

-

-500

nA

VCE=-400V, VBE=0

IEBO

-

-100

nA

VEB=-6V, IC=0

*VCE(sat)1

-

-350

mV

IC=-1mA, IB=-0.1mA

*VCE(sat)2

-

-500

mV

IC=-10mA, IB=-1mA

*VCE(sat)3

-

-750

mV

IC=-50mA, IB=-5mA

*VBE(sat)

-

-750

mV

IC=-10mA, IB=-1mA

*hFE1

40

-

VCE=-10V, IC=-1mA

*hFE2

50

-

300

VCE=-10V, IC=-10mA

*hFE3

45

-

VCE=-10V, IC=-50mA

*hFE4

40

-

VCE=-10V, IC=-100mA

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

SOT-89

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