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R1LV0414D Datasheet(PDF) 11 Page - Renesas Technology Corp |
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R1LV0414D Datasheet(HTML) 11 Page - Renesas Technology Corp |
11 / 14 page R1LV0414D Series Low VCC Data Retention Characteristics (Ta = −40 to +85°C) Parameter Symbol Min Typ Max Unit Test conditions VCC for data retention VDR 2 V Vin ≥ 0V (1) CS# ≥ VCC − 0.2 V or (2) LB# = UB# ≥ VCC − 0.2 V, CS# ≤ 0.2 V to +85 °C ICCDR 10 µA to +70 °C ICCDR 8 µA to +40 °C ICCDR 3 µA −5SI to +25 °C ICCDR 1* 1 2.5 µA to +85 °C ICCDR 20 µA to +70 °C ICCDR 16 µA to +40 °C ICCDR 10 µA Data retention current −7LI to +25 °C ICCDR 1* 1 10 µA VCC = 3.0 V, Vin ≥ 0V (1) CS# ≥ VCC − 0.2 V or (2) LB# = UB# ≥ VCC − 0.2 V, CS# ≤ 0.2 V Average values Chip deselect to data retention time tCDR 0 ns See retention waveform Operation recovery time tR 5 ms Note: 1. Typical values are at VCC = 3.0 V, Ta = +25 °C and specified loading, and not guaranteed. Rev.1.00, May.24.2007, page 11 of 12 |
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