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R1LV0414D Datasheet(PDF) 1 Page - Renesas Technology Corp |
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R1LV0414D Datasheet(HTML) 1 Page - Renesas Technology Corp |
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Rev.1.00, May.24.2007, page 1 of 12 R1LV0414D Series 4M SRAM (256-kword × 16-bit) REJ03C0312-0100 Rev.1.00 May.24.2007 Description The R1LV0414D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas’s high-performance 0.15 µm CMOS and TFT technologies. R1LV0414DSeries has realized higher density, higher performance and low power consumption. The R1LV0414D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II. Features • Single 3.0 V supply: 2.7 V to 3.6 V • Fast access time: 55/70 ns (max) • Power dissipation: Standby: 3 µW (typ) (V CC = 3.0 V) • Equal access and cycle times • Common data input and output. Three state output • Battery backup operation. • Temperature range: -40 to +85°C Ordering Information Type No. Access time Package R1LV0414DSB-5SI 55 ns 400-mil 44-pin plastic TSOP II (44P3W-H) R1LV0414DSB-7LI 70 ns |
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