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R1LV0416DBG-5SI Datasheet(PDF) 14 Page - Renesas Technology Corp |
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R1LV0416DBG-5SI Datasheet(HTML) 14 Page - Renesas Technology Corp |
14 / 17 page R1LV0416D Series Low V CC Data Retention Characteristics (Ta = -40 to +85°C) Parameter Symbol Min Typ Max Unit Test conditions V CC for data retention V DR 2.0 V Vin ≥ 0V (1) 0 V ≤ CS2 ≤ 0.2 V or (2) CS2 ≥ V CC − 0.2 V, CS1# ≥ V CC − 0.2 V or (3) LB# = UB# ≥ V CC − 0.2 V, CS2 ≥ V CC − 0.2 V, CS1# ≤ 0.2 V to +85 °C I CCDR 10 µA to +70 °C I CCDR 8 µA to +40 °C I CCDR 3 µA −5SI to +25 °C I CCDR 1* 1 2.5 µA to +85 °C I CCDR 20 µA to +70 °C I CCDR 16 µA to +40 °C I CCDR 10 µA Data retention current −7LI to +25 °C I CCDR 1* 1 10 µA V CC = 3.0 V, Vin ≥ 0V (1) 0 V ≤ CS2 ≤ 0.2 V or (2) CS2 ≥ V CC − 0.2 V, CS1# ≥ V CC − 0.2 V or (3) LB# = UB# ≥ V CC − 0.2 V, CS2 ≥ V CC − 0.2 V, CS1# ≤ 0.2 V Average values Chip deselect to data retention time t CDR 0 ns Operation recovery time t R 5 ms See retention waveform Note: 1. Typical values are at V CC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed. Rev.1.00, May.24.2007, page 14 of 15 |
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