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R1LV0416D Datasheet(PDF) 1 Page - Renesas Technology Corp |
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R1LV0416D Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 17 page Rev.1.00, May.24.2007, page 1 of 15 R1LV0416D Series 4M SRAM (256-kword × 16-bit) REJ03C0311-0100 Rev.1.00 May.24.2007 Description The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch ball grid array. Features • Single 3.0 V supply: 2.7 V to 3.6 V • Fast access time: 55/70 ns (max) • Power dissipation: Standby: 3 µW (typ) (V CC = 3.0 V) • Equal access and cycle times • Common data input and output. Three state output • Battery backup operation. 2 chip selection for battery backup • Temperature Range: -40 to +85°C |
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Similar Description - R1LV0416D |
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