R1LV0416D datasheet(5/17 Pages) RENESAS

Part #	R1LV0416D

Description	4M SRAM (256-kword 횞 16-bit)

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Manufacturer	RENESAS [Renesas Technology Corp]

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R1LV0416D Series

Operation Table

CS1#

CS2

WE#

OE#

UB#

LB#

I/O0 to I/O7

I/O8 to I/O15

Operation

H

×

High-Z

Standby

×

L

×

High-Z

Standby

×

H

High-Z

Standby

L

H

L

Dout

Read

L

H

L

H

L

Dout

High-Z

Lower byte read

L

H

L

H

High-Z

Dout

Upper byte read

L

H

L

×

L

Din

Write

L

H

L

×

H

L

Din

High-Z

Lower byte write

L

H

L

×

L

H

High-Z

Din

Upper byte write

L

H

×

High-Z

Output disable

Note:

H: V

IH, L: VIL, ×: VIH or VIL

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Power supply voltage relative to V

SS

V

CC

−0.5 to +4.6

V

Terminal voltage on any pin relative to V

SS

V

T

−0.5*1 to V

CC + 0.3*

2

V

Power dissipation

P

T

0.7

W

Operating temperature1

Topr

−40 to +85

°C

Storage temperature range

Tstg

−65 to +150

°C

Storage temperature range under bias

Tbias

−40 to +85

°C

Notes: 1. V

T min:

−3.0 V for pulse half-width ≤ 30 ns.

2. Maximum voltage is +4.6 V.

DC Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Note

V

CC

2.7

3.0

3.6

V

Supply voltage

V

SS

0

V

Input high voltage

V

IH

2.2



V

CC + 0.3

V

Input low voltage

V

IL

−0.3



0.6

V

1

Ambient temperature range

Ta

−40



+85

°C

Note:

1. V

IL min:

−3.0 V for pulse half-width ≤ 30 ns.

Rev.1.00, May.24.2007, page 5 of 15

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R1LV0416D Datasheet(PDF) 5 Page - Renesas Technology Corp

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