GL9915

Page: 2/4

ISSUED DATE :2005/09/14

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.03

-

V/ :

Gate Threshold Voltage

0.5

-

1.2

V

Forward Transconductance

-

13

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

25

uA

-

-

50

-

-

80

m Ł

-

5

8

Gate-Source Charge

-

1

-

Gate-Drain (“Miller”) Change

-

2

-

nc

-

8

-

Rise Time

-

55

-

Turn-off Delay Time

-

10

-

Fall Time

-

3

-

ns

Input Capacitance

-

360

580

Output Capacitance

-

70

-

Reverse Transfer Capacitance

-

50

-

pF

f=1.0MHz

Gate Resistance

-

0.78

-

Ł

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.3

V

-

17

-

ns

Reverse Recovery Charge

-

9

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by safe operating area.

2. Pulse width 300us, duty cycle 2%.

3. t