Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

NP160N04TUG Datasheet(PDF) 1 Page - NEC

Part No. NP160N04TUG
Description  SWITCHING N-CHANNEL POWER MOS FET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NP160N04TUG Datasheet(HTML) 1 Page - NEC

  NP160N04TUG Datasheet HTML 1Page - NEC NP160N04TUG Datasheet HTML 2Page - NEC NP160N04TUG Datasheet HTML 3Page - NEC NP160N04TUG Datasheet HTML 4Page - NEC NP160N04TUG Datasheet HTML 5Page - NEC NP160N04TUG Datasheet HTML 6Page - NEC NP160N04TUG Datasheet HTML 7Page - NEC NP160N04TUG Datasheet HTML 8Page - NEC  
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
NP160N04TUG
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18754EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
DESCRIPTION
The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP160N04TUG-E1-AY
Note
NP160N04TUG-E2-AY
Note
Pure Sn (Tin)
Tape 800 p/reel
TO-263-7pin (MP-25ZT) typ. 1.5 g
Note Pb-free (This product does not contain Pb in the external electrode).
FEATURES
• Super low on-state resistance
RDS(on) = 1.6 m
Ω TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
• High Current Rating
ID(DC) =
±160 A
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±160
A
Drain Current (pulse)
Note1
ID(pulse)
±640
A
Total Power Dissipation (TC = 25
°C)
PT1
220
W
Total Power Dissipation (TA = 25
°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
−55 to +175
°C
Single Avalanche Energy
Note2
EAS
372
mJ
Repetitive Avalanche Current
Note3
IAR
61
A
Repetitive Avalanche Energy
Note3
EAR
372
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. RG = 25
Ω, Tch(peak) ≤ 150°C
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
0.68
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
(TO-263-7pin)


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn