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AM29243EH Datasheet(PDF) 23 Page - Advanced Micro Devices |
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AM29243EH Datasheet(HTML) 23 Page - Advanced Micro Devices |
23 / 36 page P R E L I M I N A R Y 23 Am29240 EH Microcontroller Series ™ SWITCHING CHARACTERISTICS over COMMERCIAL Operating Ranges (continued) Preliminary 25 MHz 20 MHz 16 MHz No. Unit Max Min Max Min Max Min Test Conditions 1 Parameter Description 17 Asynchronous Input Pulse Width LSYNC and PSYNC Note 5 Note 5 Note 5 All others 4T 4T 4T ns 18 UCLK Period Note 2 30 25 20 ns VCLK Period Note 2 25 20 15 ns 19 UCLK High Time Note 2 10 8 6 ns VCLK High Time Note 2 8 6 4 ns 20 UCLK Low Time Note 2 10 8 6 ns VCLK Low Time Note 2 8 6 4 ns 21 UCLK Rise time Note 2 0 5 0 5 0 5 ns VCLK Rise time Note 2 0 3 0 3 0 3 ns 22 UCLK Fall Time Note 2 0 5 0 5 0 5 ns VCLK Fall Time Note 2 0 3 0 3 0 3 ns 23 Synchronous Output Valid Delay from VCLK Rise and Fall Note 6 1 16 1 14 1 14 ns 24 Input Setup Time to VCLK Rise and Fall Notes 6, 7 10 9 9 ns 25 Input Hold Time to VCLK Rise and Fall Notes 6, 7 0 0 0 ns 26 RAS Low Time 50 50 50 ns 27 CAS Low Time 13 13 13 ns Notes: 1. All outputs driving 80 pF, measured at VOL = 1.5 V and VOH = 1.5 V using the switching test circuit shown on page 33. For higher capacitance loads: A. Add 1 ns output delay per 15 pF loading above 80 pF, up to 150 pF total. The minimum delay from PIAOE to PIACSx is 0 ns if the capacitance loading on PIACSx is equal to or higher than the capacitance loading on PIAOE. B. Add 1 ns output delay per 25 pF loading above 80 pF, up to 300 pF total. For 2/1 DRAM timing, in order to meet the setup time (tASR) from A23–A0 to RAS3–RAS0 for DRAM, the capacitive loading of A23–A0 must not exceed the capacitance loading of RAS3–RAS0 by more than 150 pF. C. Add 1 ns of output delay for MEMCLK to drive an external load of 100 pF. 2. VCLK and UCLK can be driven with TTL inputs. UCLK must be tied High if it is unused. 3. Maximum INCLK-to-MEMCLK delay can be decreased by 0.5 ns for each 10 mA increase in IOL up to the maximum of 20 mA, i.e., 6 ns maximum delay at IOL = 20 mA. 4. ID31–ID0 and IDP3–IDP0 are sampled on the rising edge of MEMCLK for all non-DRAM accesses, simple DRAM accesses, and the first access of a DRAM page-mode access. ID31–ID0 and IDP3–IDP0 are sampled on the rising edge of CASx for all DRAM page-mode accesses, except the first access of a DRAM page-mode access. (See Figures 1–12 on pages 25–32.) A. Applies to ID31–ID0 and IDP3–IDP0 for simple DRAM accesses and the first access of a DRAM page-mode access. B. Applies to ID31–ID0 and IDP3–IDP0 for DRAM page-mode accesses, except the first access of a DRAM page-mode access. When ID31–ID0 and IDP3–IDP0 are sampled on CASx, there is no additional setup time required for ID31–ID0 and IDP3–IDP0 when the parity is enabled. 5. LSYNC and PSYNC minimum width is two bit-times. A bit-time is one period of the internal video clock, which is determined by the CLKDIV field in the Video Control Register and VCLK. 6. Active VCLK edge depends on the CLKI bit in the Video Control Register. 7. LSYNC and PSYNC can be treated as synchronous signals by meeting the setup and hold times, though the synchronization delay still applies. |
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