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2SJ687-ZK-E1-AY Datasheet(PDF) 4 Page - NEC

Part # 2SJ687-ZK-E1-AY
Description  MOS FIELD EFFECT TRANSISTOR
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SJ687-ZK-E1-AY Datasheet(HTML) 4 Page - NEC

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Data Sheet D18719EJ2V0DS
4
2SJ687
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
-20
-40
-60
0-1
-2
-3
VGS =
−4.5 V
−2.5 V
Pulsed
VDS - Drain to Source Voltage - V
-0.0001
-0.001
-0.01
-0.1
-1
-10
-100
0
-1-2-3
VDS =
−10 V
Pulsed
Tch =
−55°C
−25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
-0.5
-1
-1.5
-2
-75
-25
25
75
125
175
VDS =
−10 V
ID =
−1 mA
Tch - Channel Temperature -
°C
0.01
0.1
1
10
100
-0.001
-0.01
-0.1
-1
-10
-100
VDS =
−10 V
Pulsed
Tch =
−55°C
−25°C
25
°C
75
°C
125
°C
150
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
50
0-5
-10
-15
ID =
−10 A
Pulsed
VGS - Gate to Source Voltage - V
0
10
20
30
40
50
60
-0.1
-1
-10
-100
VGS =
−2.5 V
−4.5 V
Pulsed
ID - Drain Current - A
<R>


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