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G

S

Description

Silicon Schottky Barrier Double Diodes .

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

1.90 REF.

B

2.40

2.80

H

1.00

1.30

C

1.40

1.60

K

0.10

0.20

D

0.35

0.50

J

0.40

-

E

0

0.10

L

0.85

1.15

F

0.45

0.55

M

0 C

10 C

Style : Pin 1.Anode 2.Cathode 3.Common Connection

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+125

Storage Temperature

Tstg

-65 ~ +125

Repetitive Peak Reverse Voltage

30

V

Forward Continuous Current

200

mA

Repetitive Peak Forward Current

300

mA

Surge Forward Current

600

mA

Total Power Dissipation at Ta = 25 :

PD

230

mW

Characteristics at Ta = 25 ::::

characteristics

Symbol

Min

Max.

Unit

Test Conditions

Reverse breakdown voltage

V(BR)R

30

-

V

IR=10uA

VF(1)

-

240

mV

IF=0.1mA

VF(2)

-

320

mV

IF=1mA

VF(3)

-

400

mV

IF=10mA

VF(4)

-

500

mV

IF=30mA

Forward Voltage

VF(5)

-

1000

mV

IF=100mA

Reverse Current

IR

-

2.0

uA

VR=25V

Total Capacitance

CT

-

10

pF

VR=1V, f=1MHz

Reverse Recover Time

Trr

-

5

ns

IF=IR=10mA, RL=100 Ł measured at IR=1mA