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GBAT54 Datasheet(PDF) 1 Page - GTM CORPORATION |
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GBAT54 Datasheet(HTML) 1 Page - GTM CORPORATION |
1 / 2 page 1/2 G G B B A AT T 5544//A A//C C //S S Description Silicon Schottky Barrier Double Diodes . Package Dimensions Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0 C 10 C Style : Pin 1.Anode 2.Cathode 3.Common Connection Absolute Maximum Ratings Parameter Symbol Ratings Unit Junction Temperature Tj +125 Storage Temperature Tstg -65 ~ +125 Repetitive Peak Reverse Voltage 30 V Forward Continuous Current 200 mA Repetitive Peak Forward Current 300 mA Surge Forward Current 600 mA Total Power Dissipation at Ta = 25 : PD 230 mW Characteristics at Ta = 25 :::: characteristics Symbol Min Max. Unit Test Conditions Reverse breakdown voltage V(BR)R 30 - V IR=10uA VF(1) - 240 mV IF=0.1mA VF(2) - 320 mV IF=1mA VF(3) - 400 mV IF=10mA VF(4) - 500 mV IF=30mA Forward Voltage VF(5) - 1000 mV IF=100mA Reverse Current IR - 2.0 uA VR=25V Total Capacitance CT - 10 pF VR=1V, f=1MHz Reverse Recover Time Trr - 5 ns IF=IR=10mA, RL=100 Ł measured at IR=1mA |
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