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2SK3113B-ZK-E2-AY Datasheet(PDF) 7 Page - NEC |
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2SK3113B-ZK-E2-AY Datasheet(HTML) 7 Page - NEC |
7 / 8 page Data Sheet D18061EJ3V0DS 7 2SK3113B PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3-a) 2) TO-251 (MP-3-b) 6.6 ±0.2 Mold Area 2.3 ±0.1 0.5 ±0.1 0.76 ±0.1 0.5 ±0.1 No Plating 5.3 TYP. 4.3 MIN. 1 4 23 1.14 MAX. 2.3 TYP. 2.3 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 6.6±0.2 2.3±0.1 0.5±0.1 0.76±0.12 0.5±0.1 5.3 TYP. 2.3 TYP. 2.3 TYP. 1.14 MAX. 2 13 4 3) TO-252 (MP-3ZK) EQUIVALENT CIRCUIT 6.5 ±0.2 2.3 ±0.1 0.5 ±0.1 0.76 ±0.12 0 to 0.25 0.5 ±0.1 1.0 No Plating No Plating 5.1 TYP. 4.3 MIN. 1 4 23 1.14 MAX. 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. <R> |
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Similar Description - 2SK3113B-ZK-E2-AY |
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