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2SK3113B Datasheet(PDF) 1 Page - NEC |
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2SK3113B Datasheet(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D18061EJ3V0DS00 (3rd edition) Date Published June 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2006 DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) • Gate voltage rating : ±30 V • Avalanche capability ratings ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK3113B-S15-AY Note Tube 70 p/tube TO-251 (MP-3-a) typ. 0.39 g 2SK3113B(1)-S27-AY Note Tube 75 p/tube TO-251 (MP-3-b) typ. 0.34 g 2SK3113B-ZK-E1-AY Note 2SK3113B-ZK-E2-AY Note Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK) typ. 0.27 g Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±2.0 A Drain Current (pulse) Note1 ID(pulse) ±8.0 A Total Power Dissipation (TC = 25°C) PT1 20 W Total Power Dissipation (TA = 25°C) Note2 PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note3 IAS 2.0 A Single Avalanche Energy Note3 EAS 2.7 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm 3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V (TO-251) (TO-252) <R> |
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