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G425SD Datasheet(PDF) 1 Page - GTM CORPORATION

Part No. G425SD
Description  SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.1A
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Maker  GTM [GTM CORPORATION]
Homepage  http://www.gtm.com.tw
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G425SD Datasheet(HTML) 1 Page - GTM CORPORATION

   
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G
G 442255S
S D
D
S
S U
U R
R F
F A
A C
C E
E M
M O
O U
U N
N T
T ,, S
S C
C H
H O
O T
T T
T K
K Y
Y B
B A
A R
R R
R II E
E R
R D
D II O
O D
D E
E
V
V O
O L
L T
T A
A G
G E
E 44 00 V
V ,, C
C U
U R
R R
R E
E N
N T
T 00 .. 11 A
A
Description
The G425SD is designed for low power rectification.
Package Dimensions
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
0 C
10 C
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
Storage Temperature
Tstg
-40 ~ +125
Maximum Recurrent Peak Reverse Voltage
VRRM
40
V
Maximum RMS Voltage
VRMS
28
V
Maximum DC Blocking Voltage
VDC
40
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
IFSM
1.0
A
Typical Junction Capacitance between Terminal
CJ
6.0
pF
Maximum Average Forward Rectified Current
Io
0.1
A
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25 ::::
Characteristics
Symbol
Typ.
Unit
Test Condition
Maximum Instantaneous Forward Voltage
VF(1)
0.55
V
IF(1) = 100mA
Maximum Instantaneous Forward Voltage
VF(2)
0.34
V
IF(2) = 10mA
Maximum Average Reverse Current
IR
30
uA
VR = 10V


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