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G111K Datasheet(PDF) 2 Page - GTM CORPORATION

Part # G111K
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  GTM [GTM CORPORATION]
Direct Link  http://www.gtm.com.tw
Logo GTM - GTM CORPORATION

G111K Datasheet(HTML) 2 Page - GTM CORPORATION

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ISSUED DATE :2005/04/27
REVISED DATE :2005/07/14B
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
55
-
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.06
-
V/ :
Reference to 25 : , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
2.0
V
VDS=VGS, ID=1mA
Forward Transconductance
gfs
-
600
-
mS
VDS=10V, ID=600mA
Gate-Source Leakage Current
IGSS
-
-
D10
uA
VGS= D20V
Drain-Source Leakage Current(Tj=25 : )
-
-
1
uA
VDS=55V, VGS=0
Drain-Source Leakage Current(Tj=70 : )
IDSS
-
-
100
uA
VDS=40V, VGS=0
-
-
2
VGS=10V, ID=500mA
Static Drain-Source On-Resistance
RDS(ON)
-
-
4
Ł
VGS=4.5V, ID=500mA
Total Gate Charge2
Qg
-
1
1.6
Gate-Source Charge
Qgs
-
0.5
-
Gate-Drain (“Miller”) Change
Qgd
-
0.5
-
nC
ID=600mA
VDS=50V
VGS=4.5V
Turn-on Delay Time2
Td(on)
-
12
-
Rise Time
Tr
-
10
-
Turn-off Delay Time
Td(off)
-
56
-
Fall Time
Tf
-
29
-
ns
VDS=30V
ID=600mA
VGS=10V
RG=3.3 Ł
RD=52 Ł
Input Capacitance
Ciss
-
32
50
Output Capacitance
Coss
-
8
-
Reverse Transfer Capacitance
Crss
-
6
-
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-
1.2
V
IS=200mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270 : /W when mounted on Min. copper pad.


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