Rev.0 Oct. 17, 2006 page 1 of 4

HL6714G

AlGaInP Laser Diode

ODE-208-044 (Z)

Rev.0

Oct. 17, 2006

Description

The HL6714G is a 0.67

µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is

suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic

sealing of the package assures high reliability.

Features

• Visible light output at wavelengths up to 680 nm

• Single longitudinal mode

• High output power: 10 mW (CW)

• Built-in monitor photodiode

LD

PD

1

3

Internal Circuit

Package Type

• HL6714G: G2

2

Absolute Maximum Ratings

Item

Symbol

Ratings

Unit

Optical output power

10

mW

Pulse optical output power

12 *

mW

LD reverse voltage

2

V

PD reverse voltage

30

V

Operating temperature

Topr

–10 to +50

°C

Storage temperature

Tstg

–40 to +85

°C

Note:

Pulse condition : Pulse width

≤ 1 µs , duty ≤ 50%

Optical and Electrical Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Threshold current

Ith

20

35

60

mA

—

LD operating voltage

—

—

2.7

V

Slope efficiency

ηs

0.3

0.5

0.8

mW/mA

Beam divergence

parallel to the junction

θ//

5

8

11

°

Beam divergence

parpendicular to the junction

θ⊥

18

22

30

°

Astigmatism

—

10

—

µm

Lasing wavelength

λp

660

670

680

nm

Monitor current

0.3

0.8

1.5

mA