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IRF7458PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF7458PBF
Description  SMPS MOSFET
Download  8 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF7458PBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRF7458PbF
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
–––
0.82
1.3
V
TJ = 25°C, IS = 11A, VGS = 0V
ƒ
–––
0.68
–––
TJ = 125°C, IS = 11A, VGS = 0V
trr
Reverse Recovery Time
–––
51
77
ns
TJ = 25°C, IF = 11A, VR= 20V
Qrr
Reverse Recovery Charge
–––
87
130
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
52
78
ns
TJ = 125°C, IF = 11A, VR=20V
Qrr
Reverse Recovery Charge
–––
93
140
nC
di/dt = 100A/µs
ƒ
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.029
–––
V/°C
Reference to 25°C, ID = 1mA
–––
6.3
8.0
VGS = 16V, ID = 14A
ƒ
–––
7.0
9.0
VGS = 10V, ID = 11A
ƒ
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 24V, VGS = 0V
–––
–––
100
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 24V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -24V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m
S
D
G
Diode Characteristics
2.3
110
A
VSD
Diode Forward Voltage
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
280
mJ
IAR
Avalanche Current

–––
11
A
Avalanche Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
26
–––
–––
S
VDS = 15V, ID = 11A
Qg
Total Gate Charge
–––
39
59
ID = 11A
Qgs
Gate-to-Source Charge
–––
11
17
nC
VDS = 15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.7
13
VGS = 10V
ƒ
Qoss
Output Gate Charge
–––
29
44
VGS = 0V, VDS = 16V
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 15V
tr
Rise Time
–––
4.6
–––
ID = 11A
td(off)
Turn-Off Delay Time
–––
22
–––
RG = 1.8Ω
tf
Fall Time
–––
5.0
–––
VGS = 10V
ƒ
Ciss
Input Capacitance
–––
2410 –––
VGS = 0V
Coss
Output Capacitance
–––
1100 –––
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
110
–––
pF
ƒ = 1.0MHz


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