RK4936

Transistors

Switching (30V, 6A)

RK4936

Features

1) Low Qg.

2) Low on-resistance.

3) Excellent resistance to damage from static electricity.

Structure

Silicon N-channel

MOS FET

Equivalent circuit

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

(8) (7) (6) (5)

(1) (2) (3) (4)

and the source terminals to protect the diode

against static electricity when the product is in

use.Use a protection circuit when the fixed

voltage are exceeded.

(1)

(2)

(3)

(5)

(6)

(7)

(8)

(4)

∗

∗

External dimensions (Units : mm)

ROHM : SOP8

3.9

1.5

0.15

6.0

Max.1.75

0.5

(1)

(4)

(8)

(5)

Each lead has same dimensions

Absolute maximum ratings (Ta = 25

°C)

Tch

30

V

V

A

A

W

°C

±20

6

A

A

24

6

24

2

150

A

A

1.3

5.2

Tstg

°C

−55~+150

Symbol

Limits

Unit

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Reverse Drain

Current

Source Current

(Body Diode)

Total Power Dissipation(Tc=25

°C)

Channel Temperature

Storage Temperature

Continuous

Pulsed

Continuous

Pulsed

Continuous

Pulsed