Subject to change without notice.

www.cree.com

FEATURES

EZBright Power Chip LED Rf Performance

60 mW min. @ 150 mA – 450 & 460 nm

Lambertian Radiation

Conductive Epoxy, Solder Paste or Preforms,

or Flux Eutectic Attach

Thin 100-

μm Chip

Low Forward Voltage – 3.5 V Typical at 150 mA

Single Wire Bond Structure

Maximum DC Forward Current - 200 mA

•

–

•

•

•

•

•

•

APPLICATIONS

General Illumination

Automobile

Aircraft

Decorative Lighting

Task Lighting

Outdoor Illumination

White LEDs

Crosswalk Signals

Backlighting

•

–

–

–

–

–

•

•

•

Data Sheet

CxxxEZ400-Sxx000

Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials

with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The

optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these

LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method.

These vertically structured, low forward voltage LED chips are approximately 100 microns in height. Cree’s EZ™ chips

are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,

such as general illumination, automotive lighting and LCD backlighting.

CxxxEZ400-Sxx000 Chip Diagram

Top View

Bottom View

EZBright LED Chip

380 x 380

t = 100

μm

Backside

Metallization

Gold Bond Pad

100

μm

Die Cross Section

Anode (+);

3

μm AuSn

Cathode (-)