Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,

the Cree logo, G•SiC and XBright are registered trademarks, and XB is a trademark of Cree, Inc.



CPR3CM Rev. D

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

www.cree.com

Maximum Ratings at T

Note 

CxxxXB900-Sx000-A

DC Forward Current

Peak Forward Current (1/10 duty cycle @ 1kHz)

700 mA

LED Junction Temperature

125°C

Reverse Voltage

5 V

Operating Temperature Range

-40°C to +85°C

Storage Temperature Range

-40°C to +100°C

Typical Electrical/Optical Characteristics at T

Note 

Part Number

Forward Voltage (V

Reverse Current

[I(Vr=5V), μA]

Full Width Half Max

(

λ

Min.

Typ.

Max.

Max.

Typ.

C460XB900-S9000-A

3.0

3.4

3.9

10

21

C470XB900-S9000-A

3.0

3.4

3.9

10

22

C505XB900-S6000-A

3.0

3.4

3.9

10

30

C527XB900-S4000-A

3.0

3.4

3.9

10

35

Mechanical Specifications

CxxxXB900-Sx000-A

Description

Dimension

Tolerance

P-N Junction Area (μm)

848 x 848

± 25

Top Area (μm)

725 x 725

± 25

Bottom Area (μm)

900 x 900

± 50

Chip Thickness (μm)

250

± 25

Top Au Bond Pad Diameter (μm)

120

± 10

Au Bond Pad Thickness (μm)

1.2

± 0.5

Back Contact Metal Area (μm)

764 x 764

± 25

Back Contact Metal Thickness (μm)

1.7

± 0.3

Notes:

Maximum ratings are package dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant

for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package

to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).

All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled

and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are

within the range of average expected by manufacturer in large quantities and are provided for information only. All measurements

were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using

Illuminance E.

Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C.

Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the

chip.

XB900 chips are shipped with the junction side up, requiring die transfer prior to die attach.

Specifications are subject to change without notice.

1.

2.

3.

4.

5.

6.