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SGE2675-1 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # SGE2675-1
Description  high voltage transformer
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

SGE2675-1 Datasheet(HTML) 1 Page - Microsemi Corporation

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Magnetic Component Specification
Specification Number
SGE2675-1
Rev. B
Linfinity Microelectronics, Inc., 11861 Western Ave., Garden Grove, CA 92841 tel. (714) 898-8121
This Document describes and specifies the electrical and mechanical characteristics of SGE2675-1 high voltage
transformer. This component should be designed and manufactured in accordance with Engineering Specification
LES2608T-01
1. Electrical Characteristics
Inductance ( at 10Khz, 0.1V)
D.C Resistance
Items
Min
Nom
Max
Items
Min
Nom
Max
L1-2 (uH)
60
85
112
Rdc1-2(m
Ω)
198
L2-3 (uH)
60
85
112
Rdc2-3(m
Ω)
198
L4-5 (mH)
428
Rdc4-5(
Ω)
493
570
Inductance ( at 100Khz, 1Vrms)
LLKG1-2 ,LLKG2-3
18
19
20
Should be shorted pin 4-5
LLKG1-2 /LLKG2-3
0.96
1
1.04
Bifilaring
Secondary Self Capacitance
C4-5(pF)
1.9
2.2
3
HP4280A 1Mhz C meter, Floating mode
Dielectric Voltage Withstand
Secondary to Core
1500Vrms min. ( 1min. 60Hz)
Primary to Core
750Vrms min.
Primary to Secondary
60 Hz.,Arc-detect enabled, 5 sec.
min., 200uA max. leakage current
750Vrms min.
Operating Test
V4-5
Primary driven with 80 kHz. sine
wave source (pin 1-3), secondary
measured with Tektronix P6015
(or equiv.)..
1200Vrms min.
2. Winding Specifications
Primary
Secondary
Pin 1 – 2
Pin 2-3
Pin 4-5
Winding Sequence
1S-2F
2S-3F
4S-5F
Wire Size & Type
0.18
φ, Single Insulation,
130
°C
0.18
φ, Single Insulation,
130
°C
0.03
φ, Triple insulation,
130
°C
Number of Turns
22
22
1600
Winding Method
Bifilar
3. Physical Specification & Wiring Diagram


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