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IRG4BC20SPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4BC20SPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRG4BC20SPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 27 40 IC = 10A Qge Gate - Emitter Charge (turn-on) 4.3 6.5 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) 10 15 VGE = 15V td(on) Turn-On Delay Time 27 tr Rise Time 9.7 TJ = 25°C td(off) Turn-Off Delay Time 540 810 IC = 10A, VCC = 480V tf Fall Time 430 640 VGE = 15V, RG = 50Ω Eon Turn-On Switching Loss 0.12 Energy losses include "tail" Eoff Turn-Off Switching Loss 2.05 mJ See Fig. 9, 10, 14 Ets Total Switching Loss 2.17 3.2 td(on) Turn-On Delay Time 25 TJ = 150°C, tr Rise Time 13 IC = 10A, VCC = 480V td(off) Turn-Off Delay Time 760 VGE = 15V, RG = 50Ω tf Fall Time 780 Energy losses include "tail" Ets Total Switching Loss 3.46 mJ See Fig. 11, 14 LE Internal Emitter Inductance 7.5 nH Measured 5mm from package Cies Input Capacitance 550 VGE = 0V Coes Output Capacitance 39 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 7.1 = 1 .0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.75 V/°C VGE = 0V, IC = 1.0mA 1.40 1.6 IC = 10A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage 1.85 IC = 19A See Fig.2, 5 1.44 IC = 10A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -11 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance
2.0 5.8 S VCE = 100V, IC = 10A 250 VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. |
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