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CNY64 Datasheet(PDF) 4 Page - Vishay Siliconix |
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CNY64 Datasheet(HTML) 4 Page - Vishay Siliconix |
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www.vishay.com 4 Document Number 83540 Rev. 1.6, 26-Oct-04 VISHAY CNY64/ CNY65/ CNY66 Vishay Semiconductors Coupler Insulation Rated Parameters Parameter Test condition Symbol Min Typ. Max Unit Rated impulse voltage VIOTM 8kV Safety temperature Tsi 150 °C Parameter Test condition Symbol Min Typ. Max Unit Partial discharge test voltage - Routine test 100 %, ttest = 1 s Vpd 2.8 kV Partial discharge test voltage - Lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8kV Vpd 2.2 kV Insulation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω Figure 1. Derating diagram 0 25 50 75 100 125 150 175 200 225 250 0 25 50 75 100 125 150 175 200 Tamb(°C ) 95 10922 Psi (mW) Isi (mA) Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 t 13930 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VIOTM VPd VIOWM VIORM 0 t1 ttest tTr = 60 s tstres t3 t4 t2 |
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