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7700 Datasheet(PDF) 2 Page - Bi technologies |
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7700 Datasheet(HTML) 2 Page - Bi technologies |
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2 / 8 page  7-20 Model 7700 Series Parameter Symbol Conditions1 Model Min. Typ. Max. Units MOS FET Continuous Drain Current ID TC = 25°C B 56 A -2A 80 A TC = 100°C B 34.8 A -2A 48 A Pulsed Drain Current IDM B 224 A -2A 320 A Single Pulse Avalanche Energy EAS B 760 mJ -2A 960 mJ Repetitive Avalanche Energy EAR B19 mJ -2A 28 mJ Avalanche Current IAR B 8.7 A -2A 20 A Gate to Source Voltage VGS B, -2A ±30 V Leakage Current IDSS VGS = 0V, VDS = 500V B, -2A 100 µA Drain to Source ON Voltage VDS(ON) IC = 28A, VGS = 10V B 1.5 2.8 V -2A 1.0 2.7 V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 1mA B, -2A 2.0 4.0 V Gate Leakage Current IGSS VGS ±20V B, -2A ±400 nA Total Gate Charge Qg ID = 56A, VDS = 400V B 600 nC Gate Source Charge Qgs VGS = 10V B 80 nC Gate Drain (Miller) Charge Qgd B 320 nC Total Gate Charge Qg ID = 80A, VDS = 400V -2A 480 nC Gate Source Charge Qgs VGS = 10V -2A 128 nC Gate Drain (Miller) Charge Qgd -2A 196 nC Continous Source Current IS B56 A (Body Diode) -2A 80 A Pulsed Source Current ISM B 224 A (Body Diode) -2A 320 A Body Diode Forward Voltage VSD IS = 56A, VGS = 0V B 0.4 1.4 V IS = 80A, VGS = 0V -2A 0.5 1.8 V Reverse Recovery Time trr IF = 56A, di/dt = 400Aµs B 810 ns (Body Diode) IF = 80A, di/dt = 400Aµs -2A 860 ns Reverse Recovery Charge Qrr IF = 56A, di/dt = 400Aµs B 28.8 ns (Body Diode) IF = 80A, di/dt = 400Aµs -2A 39.6 ns Internal Gate Resistor RG B 1.25 Ω -2A 0.25 Ω Junction Temperature TJ B, -2A 150 °C Thermal Resistance RTHJC B 0.20 .025 °C/W -2A .15 .20 °C/W ELECTRICAL CHARACTERISTICS |
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