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US1 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. US1
Description  SMA ultra fast low-loss controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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US1 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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2000 Feb 14
3
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
US1 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm. For more
information please refer to the
‘General Part of associated Handbook’.
IFSM
non-repetitive peak forward current
t = 8.3 ms half sine wave;
Tj =25 °C prior to surge;
VR =VRRMmax
25
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
See Fig.3
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF =1A;
US1A to US1G
see Fig.4
1.1
V
US1J
see Fig.5
1.4
V
IR
reverse current
VR =VRRMmax; see Figs 6 and 7
10
µA
VR =VRRMmax; Tj = 165 °C; see Figs 6 and 7
50
µA
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.12
50
ns
Cd
diode capacitance
VR = 4 V; f = 1 MHz;
US1A to US1G
see Fig.8
14
pF
US1J
see Fig.9
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point; see Fig.10
27
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT


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