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APTM100H18FG Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. APTM100H18FG
Description  Full - Bridge MOSFET Power Module
Download  6 Pages
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTM100H18FG Datasheet(HTML) 1 Page - Microsemi Corporation

   
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APTM100H18FG
www.microsemi.com
1 – 6
S4
G4
S3
Q3
G3
G1
Q1
Q4
0/VBUS
VBUS
G2
Q2
S2
S1
S4
G4
G2
S2
VBUS
0/VBUS
S1
G1
S3
OUT1
OUT2
G3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
43
ID
Continuous Drain Current
Tc = 80°C
33
IDM
Pulsed Drain current
172
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
210
m
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1000V
RDSon = 180mΩ typ @ Tj = 25°C
ID = 43A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7® FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Full - Bridge
MOSFET Power Module


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