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APTM100H18FG Datasheet(PDF) 4 Page - Microsemi Corporation

Part No. APTM100H18FG
Description  Full - Bridge MOSFET Power Module
Download  6 Pages
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTM100H18FG Datasheet(HTML) 4 Page - Microsemi Corporation

   
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APTM100H18FG
www.microsemi.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
20
40
60
80
100
120
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
VGS=15, 10&8V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
140
160
012345
6789
VGS, Gate to Source Voltage (V)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
20406080
100
120
ID, Drain Current (A)
Normalized to
VGS=10V @ 21.5A
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
TC, Case Temperature (°C)
DC Drain Current vs Case Temperature


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