APTM50TAM65FPG

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2 – 6

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

100

Zero Gate Voltage Drain Current

500

µA

Drain – Source on Resistance

65

78

m

Ω

Gate Threshold Voltage

3

5

V

Gate – Source Leakage Current

±100

nA

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input Capacitance

7000

Output Capacitance

1400

Reverse Transfer Capacitance

f = 1MHz

90

pF

Total gate Charge

140

Gate – Source Charge

40

Gate – Drain Charge

70

nC

Turn-on Delay Time

21

Rise Time

38

Turn-off Delay Time

75

Fall Time

Inductive switching @ 125°C

93

ns

Turn-on Switching Energy

1035

Turn-off Switching Energy

Inductive switching @ 25°C

845

µJ

Turn-on Switching Energy

1556

Turn-off Switching Energy

Inductive switching @ 125°C

1013

µJ

Source - Drain diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

51

Continuous Source current

(Body diode)

Tc = 80°C

38

A

Diode Forward Voltage

1.3

V

dv/dt

Peak Diode Recovery

15

V/ns

270

Reverse Recovery Time

540

ns

2.6

Reverse Recovery Charge

9.6

µC

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

di/dt

≤ 700A/µs