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APTM50HM75STG Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. APTM50HM75STG
Description  Full bridge Series & parallel diodes MOSFET Power Module
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTM50HM75STG Datasheet(HTML) 1 Page - Microsemi Corporation

   
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APTM50HM75STG
www.microsemi.com
1 – 6
OUT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3B
CR1B
G2
S2
NTC1
CR2B
Q2
CR4B
0/V BUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VB US
OUT1
OUT2
NTC1
NTC2
G3
S3
VBUS
G1
S1
G4
G2
S2
0/VBUS
S4
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
46
ID
Continuous Drain Current
Tc = 80°C
34
IDM
Pulsed Drain current
184
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
90
m
PD
Maximum Power Dissipation
Tc = 25°C
357
W
IAR
Avalanche current (repetitive and non repetitive)
46
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 500V
RDSon = 75mΩ typ @ Tj = 25°C
ID = 46A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS compliant
Full bridge
Series & parallel diodes
MOSFET Power Module


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