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APTM50H10FT3G Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTM50H10FT3G Datasheet(HTML) 5 Page - Microsemi Corporation |
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5 / 6 page  APTM50H10FT3G www.microsemi.com 5 - 6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID=18.5A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) limited by RDSon Maximum Safe Operating Area 10ms 1ms 100µs 1 10 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) limited by RDSon Single pulse TJ=150°C TC=25°C Ciss Crss Coss 10 100 1000 10000 100000 0 102030 4050 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage VDS=100V VDS=250V VDS=400V 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 Gate Charge (nC) Gate Charge vs Gate to Source Voltage ID=37A TJ=25°C |
Similar Part No. - APTM50H10FT3G |
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Similar Description - APTM50H10FT3G |
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