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APTM50DSKM65T3G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTM50DSKM65T3G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page  APTM50DSKM65T3G www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 500V Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 400V Tj = 125°C 500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 25.5A 65 78 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 7000 Coss Output Capacitance 1400 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 90 pF Qg Total gate Charge 140 Qgs Gate – Source Charge 40 Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 51A 70 nC Td(on) Turn-on Delay Time 21 Tr Rise Time 38 Td(off) Turn-off Delay Time 75 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 51A RG = 3Ω 93 ns Eon Turn-on Switching Energy 1035 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 51A, RG = 3Ω 845 µJ Eon Turn-on Switching Energy 1556 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 51A, RG = 3Ω 1013 µJ Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 600 µA IF DC Forward Current Tc = 70°C 80 A Tj = 25°C 1.45 VF Diode Forward Voltage IF = 80A Tj = 125°C 1.35 V Tj = 25°C 95 trr Reverse Recovery Time Tj = 125°C 115 ns Tj = 25°C 5.2 Qrr Reverse Recovery Charge IF = 80A VR = 300V di/dt=4500A/µs Tj = 125°C 8 µC |
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