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APTM20UM04SAG Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTM20UM04SAG
Description  Single switch Series & parallel diodes MOSFET Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM20UM04SAG Datasheet(HTML) 1 Page - Microsemi Corporation

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APTM20UM04SAG
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D
Q1
G
S
CR1
SK
D
S
G
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
417
ID
Continuous Drain Current
Tc = 80°C
310
IDM
Pulsed Drain current
1670
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
5
m
PD
Maximum Power Dissipation
Tc = 25°C
1560
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 200V
RDSon = 4mΩ typ @ Tj = 25°C
ID = 417A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Single switch
Series & parallel diodes
MOSFET Power Module


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