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APTM20SKM04G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTM20SKM04G Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 7 page APTM20SKM04G www.microsemi.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 200V Tj = 25°C 500 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 2000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 186A 4 5 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 28.9 Coss Output Capacitance 9.32 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.58 nF Qg Total gate Charge 560 Qgs Gate – Source Charge 212 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 372A 268 nC Td(on) Turn-on Delay Time 32 Tr Rise Time 64 Td(off) Turn-off Delay Time 88 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 372A RG = 1.2Ω 116 ns Eon Turn-on Switching Energy 3396 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2Ω 3716 µJ Eon Turn-on Switching Energy 3744 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2Ω 3944 µJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 750 µA IF DC Forward Current Tc = 80°C 300 A IF = 300A 1 1.1 IF = 600A 1.4 VF Diode Forward Voltage IF = 300A Tj = 125°C 0.9 V Tj = 25°C 60 trr Reverse Recovery Time Tj = 125°C 110 ns Tj = 25°C 600 Qrr Reverse Recovery Charge IF = 300A VR = 133V di/dt = 600A/µs Tj = 125°C 2520 nC |
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