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APTM20HM10FG Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. APTM20HM10FG
Description  Full - Bridge MOSFET Power Module
Download  7 Pages
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTM20HM10FG Datasheet(HTML) 2 Page - Microsemi Corporation

   
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APTM20HM10FG
www.microsemi.com
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 200V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
1000
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 87.5A
10
12
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
13.7
Coss
Output Capacitance
4.36
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.19
nF
Qg
Total gate Charge
224
Qgs
Gate – Source Charge
86
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 150A
94
nC
Td(on)
Turn-on Delay Time
28
Tr
Rise Time
56
Td(off)
Turn-off Delay Time
81
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 150A
RG = 2.5Ω
99
ns
Eon
Turn-on Switching Energy
926
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5Ω
910
µJ
Eon
Turn-on Switching Energy
1216
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5Ω
1062
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
175
IS
Continuous Source current
(Body diode)
Tc = 80°C
131
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 150A
1.3
V
dv/dt
Peak Diode Recovery
8
V/ns
Tj = 25°C
220
trr
Reverse Recovery Time
Tj = 125°C
420
ns
Tj = 25°C
2.14
Qrr
Reverse Recovery Charge
IS = -150A
VR = 133V
diS/dt = 200A/µs
Tj = 125°C
5.8
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 150A
di/dt
≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C


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