APTM08TAM04PG

www.microsemi.com

1 – 7

W

VBUS1

VBUS2

VBUS3

0/VBUS3

V

G5

G6

S5

S6

0/VBUS1

S2

G2

G1

S1

0/VBUS2

U

S3

S4

G3

G4

S5

G5

G6

S6

VBUS 2

0/VBUS 3

VBUS 3

0/VBUS 2

W

V

G4

S4

G3

S3

VBUS 1

0/VBUS 1

S1

G1

S2

G2

U

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

75

V

120

Continuous Drain Current

90

Pulsed Drain current

250

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

4.5

m

Ω

Maximum Power Dissipation

138

W

Avalanche current (repetitive and non repetitive)

75

A

Repetitive Avalanche Energy

50

Single Pulse Avalanche Energy

1500

mJ

Application

•

Welding converters

•

Switched Mode Power Supplies

•

Uninterruptible Power Supplies

•

Motor control

Features

•

Power MOSFETs

-

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic diode

-

Avalanche energy rated

-

Very rugged

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

-

Lead frames for power connections

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Solderable terminals both for power and signal for

easy PCB mounting

•

Very low (12mm) profile

•

Each leg can be easily paralleled to achieve a phase

leg of three times the current capability

•

Module can be configured as a three phase bridge

•

Module can be configured as a boost followed by a

full bridge

•

RoHS Compliant

Triple phase leg

MOSFET Power Module