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APTGT400A120G Datasheet(PDF) 1 Page - Microsemi Corporation |
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APTGT400A120G Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 5 page APTGT400A120G www.microsemi.com 1 - 5 Absolute maximum ratings * Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater than 100°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Q2 0/VBUS Q1 VBUS OUT G1 G2 E2 E1 OUT VBUS E1 G1 0/VBUS G2 E2 Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V TC= 25°C 560 * IC Continuous Collector Current TC= 80°C 400 ICM Pulsed Collector Current TC= 25°C 800 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC= 25°C 1785 W RBSOA Reverse Bias Safe Operating Area Tj = 125°C 800A @ 1100V VCES = 1200V IC = 400A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Phase leg Fast Trench + Field Stop IGBT® Power Module |
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