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APTGT300DU60G Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTGT300DU60G Datasheet(HTML) 5 Page - Microsemi Corporation |
5 / 5 page APTGT300DU60G www.microsemi.com 5 - 5 Forward Characteristic of diode TJ=25°C TJ=125°C TJ=150°C 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2 VF (V) Hard switching ZCS ZVS 0 20 40 60 80 100 120 0 100 200 300 400 500 IC (A) VCE=300V D=50% RG=1.8Ω TJ=150°C Tc=85°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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