APTGT50TA60PG

www.microsemi.com

5 - 5

Forward Characteristic of diode

0

20

40

60

80

100

0

0.4

0.8

1.2

1.6

2

2.4

Hard

switching

ZCS

ZVS

0

20

40

60

80

100

120

0

2040

6080

D=50%

Operating Frequency vs Collector Current

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration in Seconds

Diode

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Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.