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APTGT50TA60PG Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTGT50TA60PG Datasheet(HTML) 5 Page - Microsemi Corporation |
5 / 5 page APTGT50TA60PG www.microsemi.com 5 - 5 Forward Characteristic of diode TJ=25°C TJ=125°C TJ=150°C 0 20 40 60 80 100 0 0.4 0.8 1.2 1.6 2 2.4 VF (V) Hard switching ZCS ZVS 0 20 40 60 80 100 120 0 2040 6080 IC (A) VCE=300V D=50% RG=8.2Ω TJ=150°C Tc=85°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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