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APTGT50DDA120T3G Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. APTGT50DDA120T3G
Description  Dual Boost chopper Fast Trench Field Stop IGBT Power Module
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTGT50DDA120T3G Datasheet(HTML) 2 Page - Microsemi Corporation

   
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
500
µA
Tj = 25°C
1.4
1.7
2.1
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 50A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 2mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
3600
Crss
Reverse Transfer Capacitance
VGE = 0V,VCE = 25V
f = 1MHz
160
pF
Td(on)
Turn-on Delay Time
90
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18Ω
70
ns
Td(on)
Turn-on Delay Time
90
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18Ω
90
ns
Eon
Turn-on Switching Energy
Tj = 125°C
5
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18Ω
Tj = 125°C
5.5
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
µA
IF
DC Forward Current
Tc = 70°C
60
A
IF = 60A
2
2.5
IF = 120A
2.3
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.8
V
Tj = 25°C
400
trr
Reverse Recovery Time
Tj = 125°C
470
ns
Tj = 25°C
1200
Qrr
Reverse Recovery Charge
IF = 60A
VR = 800V
di/dt =200A/µs
Tj = 125°C
4000
nC
Er
Reverse Recovery Energy
IF = 60A
VR = 800V
di/dt =1000A/µs
Tj = 125°C
2.2
mJ


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