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APTGT50DDA120T3G Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTGT50DDA120T3G
Description  Dual Boost chopper Fast Trench Field Stop IGBT Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGT50DDA120T3G Datasheet(HTML) 1 Page - Microsemi Corporation

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Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC= 25°C
75
IC
Continuous Collector Current
TC= 80°C
50
ICM
Pulsed Collector Current
TC= 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
270
W
RBSOA
Reverse Bias Safe Operating Area
TJ = 125°C
100A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
23
22
13
Q1
CR1
30
8
Q2
7
14
CR2
16
R1
29
15
26
27
4
3
31
32
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Fast Trench + Field Stop IGBT® Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
RoHS Compliant
Dual Boost chopper
Fast Trench + Field Stop IGBT®
Power Module


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