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PI3033B Datasheet(PDF) 5 Page - AMI SEMICONDUCTOR

Part No. PI3033B
Description  Contact Image Sensor
Download  13 Pages
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Maker  AMI [AMI SEMICONDUCTOR]
Homepage  http://www.amis.com
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PI3033B Datasheet(HTML) 5 Page - AMI SEMICONDUCTOR

 
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Preliminary PI3033B datasheet
Electro-Optical Characteristics (25
o C)
The electro-optical characteristics of PI3033B imaging sensor chip are listed in Table 2. These values
are measured at 25
o C.
Parameters
Symbols
Typical
Units
Notes
Number of Photo-elements
64
elements
Pixel-to-pixel spacing
125
µm
Line scanning rate
Tint
(1)
864
µs/line
Clock frequency
Fclk
(2)
2.0
MHz
See note 2 for higher clock
speed. (maximum 5 MHz)
Output voltage
Vpavg
(3)
1.0
V
Exp = 1.8 X 10
–2 µJ/cm 2
Output voltage non-uniformity
Up
(4)
± 7.5
%
Dark output voltage
Vd
(5)
<20
mV
Note 5 & 3
Dark output non-uniformity
Ud
(6)
<10
mV
Note 6 & 3
Adjacent Pixel non-uniformity
Upadj
(7)
<7.5
%
Chip-to-chip non-uniformity
Ucc
(8)
± 7.5
%
Table 2. Electro-Optical Characteristic
Notes: (1)
Tint stands for the line scanning rate or the integration time. It is determined by
the time interval between two start pulses.
(2)
Fclk stands for the input clock frequency. For Fclk > 2.0 MHz see note 3 and the
section Video Output Response Under Exposure.
(3)
Vpavg =
∑Vp(n)/Npixels (average level in one line scan).
Where Vp(n) is the amplitude of n
th pixel in the sensor chip and
Npixels is the total number of pixels in sensor chip. Vpavg is converted from
impulse current video pixel into a voltage output. See Figure 4, Video Pixel
Output in section Output Circuit Of The Image Sensor and Figure 5, Video
Output Test and Application Circuit in section Signal Conversion Circuit on page
6 and 7.
Exp = LP x Tint, where LP is light power (Yellow-Green) and Tint is as defined
above. See Figure 6, Vpavg Output versus Light Exposure in section Video
Output Response Under Exposure, on page 8.
(4)
Up is the uniformity specification, measured under a uniform exposing light
exposure. Up = [Vp(max) - Vpavg] / Vpavg x 100% or [Vpavg - Vp(min)] / Vpavg}
x 100%, whichever is greater.
Where
Vp(max) is the maximum pixel output voltage in the light.
Vp(min) is the minimum pixel output voltage in the light.
(5)
Vd =
∑Vp(n)/Npixels. Where Vp(n) is the pixels signal amplitude of the nth pixel
of the sensor. Dark is where the sensor is placed in the dark environment.
(6)
Ud = Vdmax – Vdmin. Dark is same definition as above.
(7)
Upadj = MAX[ | (Vp(n) - Vp(n+l) | / Vp(n)) x 100%. Upadj is the nonuniformity in
percentage. It is the amplitude difference between two neighboring pixels.
(8)
Ucc is the uniformity specifications, measured among the good die on the wafer.
Under uniform light exposure the sensors are measured and calculated with
following algorithm: Vpavg of all the good dies on the wafer are averaged and
assigned VGpavg. Then the die with maximum Vpavg is assigned Vpavg(max),
Page 5 of 13 Date: 03/18/05


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