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APTGF300DA120G Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. APTGF300DA120G
Description  Boost chopper NPT IGBT Power Module
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTGF300DA120G Datasheet(HTML) 1 Page - Microsemi Corporation

   
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APTGF300DA120G
www.microsemi.com
1 - 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
Tc = 25°C
400
IC
Continuous Collector Current
Tc = 80°C
300
ICM
Pulsed Collector Current
Tc = 25°C
600
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
Tc = 25°C
1780
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 150°C
600A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G2
E2
Q2
0/VBUS
OUT
CR1
VBUS
VBUS
OUT
0/VBUS
G2
E2
VCES = 1200V
IC = 300A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Non Punch Through (NPT) FAST IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Boost chopper
NPT IGBT Power Module


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