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APTGF180DA60TG Datasheet(PDF) 5 Page - Microsemi Corporation

Part No. APTGF180DA60TG
Description  Boost chopper NPT IGBT Power Module
Download  6 Pages
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTGF180DA60TG Datasheet(HTML) 5 Page - Microsemi Corporation

   
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APTGF180DA60TG
www.microsemi.com
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VGE = 15V
15
20
25
30
35
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
Turn-On Delay Time vs Collector Current
Tj = 25°C
VCE = 400V
RG = 2.5Ω
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
50
100
150
200
250
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 2.5Ω
VGE=15V,
TJ=125°C
0
20
40
60
80
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 400V
RG = 2.5Ω
TJ = 25°C
TJ = 125°C
0
20
40
60
80
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.5Ω
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
4
8
12
16
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
VCE = 400V
RG = 2.5Ω
TJ = 25°C
TJ = 125°C
0
2
4
6
8
10
12
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 2.5Ω
Eon, 360A
Eoff, 360A
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
0
8
16
24
32
0
5
10
15
20
25
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
VCE = 400V
VGE = 15V
TJ= 125°C
Eon, 360A
Eoff, 360A
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
0
4
8
12
16
20
0
25
50
75
100
125
TJ, Junction Temperature (°C)
Switching Energy Losses vs Junction Temp.
VCE = 400V
VGE = 15V
RG = 2.5Ω


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