APTGF100DA120TG

www.microsemi.com

6 - 6

Cies

Cres

Coes

100

1000

10000

0

1020304050

Capacitance vs Collector to Emitter Voltage

0

50

100

150

200

250

0

400

800

1200

Reverse Bias Safe Operating Area

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

Hard

switching

ZCS

ZVS

0

20

40

60

80

100

120

10

30

50

70

90

110

Operating Frequency vs Collector Current

V

D = 50%

R

T

T

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.