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APTGF90TDU60PG Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. APTGF90TDU60PG
Description  Triple dual Common Source NPT IGBT Power Module
Download  6 Pages
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTGF90TDU60PG Datasheet(HTML) 1 Page - Microsemi Corporation

   
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APTGF90TDU60PG
www.microsemi.com
1 - 6
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Non Punch Through (NPT) Fast IGBT®
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
RoHS compliant
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
E5/E6
G5
E5
E3/E4
C5
G3
C6
E6
G6
C2
E2
G2
C4
E4
G4
E1
C1
G1
E1/E2
C3
E3
E5
G5
C 5
C 3
G3
E5/E6
E3
E6
G6
C 4
C 6
E4
G4
E1
E1/E2
E3/E4
C 1
G1
G2
E2
C 2
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
Tc = 25°C
110
IC
Continuous Collector Current
Tc = 80°C
90
ICM
Pulsed Collector Current
Tc = 25°C
315
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
Tc = 25°C
416
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 150°C
200A @ 600V
VCES = 600V
IC = 90A @ Tc = 80°C
Triple dual Common Source
NPT IGBT Power Module


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