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APTGF50DDA60T3G Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. APTGF50DDA60T3G
Description  Dual Boost Chopper NPT IGBT Power Module
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTGF50DDA60T3G Datasheet(HTML) 1 Page - Microsemi Corporation

   
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APTGF50DDA60T3G
www.microsemi.com
1 - 6
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC= 25°C
65
IC
Continuous Collector Current
TC= 80°C
50
ICM
Pulsed Collector Current
TC= 25°C
230
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
250
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
100A@500V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
23
22
13
Q1
CR1
30
8
Q2
7
14
CR2
16
R1
29
15
26
27
4
3
31
32
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
VCES = 600V
IC = 50A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Non Punch Through (NPT) Fast IGBT®
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
-
Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single boost of twice the current capability
RoHS compliant
Dual Boost chopper
NPT IGBT Power Module


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