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APTGF50DDA60T3G Datasheet(PDF) 4 Page - Microsemi Corporation

Part No. APTGF50DDA60T3G
Description  Dual Boost Chopper NPT IGBT Power Module
Download  6 Pages
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTGF50DDA60T3G Datasheet(HTML) 4 Page - Microsemi Corporation

   
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APTGF50DDA60T3G
www.microsemi.com
4 - 6
Typical Performance Curve
Output characteristics (VGE=15V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
01
234
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
0123456
789
10
VGE, Gate to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Ic=100A
Ic=50A
Ic=25A
0
1
2
3
4
5
6
7
8
6
8
10
12
14
16
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=100A
Ic=50A
Ic=25A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50
-25
0
255075
100 125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
60
70
80
-50 -25
0
25
50
75 100 125 150
TC, Case Temperature (°C)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
VCE=300V
VCE=480V
0
2
4
6
8
10
12
14
16
18
0
255075
100 125 150 175 200
Gate Charge (nC)
IC = 50A
TJ = 25°C
Output Characteristics (VGE=10V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
01
234
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle


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