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APTC80H29T3G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTC80H29T3G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page 
APTC80H29T3G www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 800V Tj = 25°C 25 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V Tj = 125°C 250 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 7.5A 290 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 1mA 2.1 3 3.9 V IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 2254 Coss Output Capacitance 1046 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 54 pF Qg Total gate Charge 90 Qgs Gate – Source Charge 11 Qgd Gate – Drain Charge VGS = 10V VBus = 400V ID = 15A 45 nC Td(on) Turn-on Delay Time 10 Tr Rise Time 13 Td(off) Turn-off Delay Time 83 Tf Fall Time Inductive switching @125°C VGS = 15V VBus = 533V ID = 15A RG = 5Ω 35 ns Eon Turn-on Switching Energy 243 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω 139 µJ Eon Turn-on Switching Energy 425 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω 171 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 15 IS Continuous Source current (Body diode) Tc = 80°C 11 A VSD Diode Forward Voltage VGS = 0V, IS = - 15A 1.2 V dv/dt Peak Diode Recovery 6 V/ns trr Reverse Recovery Time Tj = 25°C 550 ns Qrr Reverse Recovery Charge IS = - 15A VR = 400V diS/dt = 100A/µs Tj = 25°C 15 µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 15A di/dt ≤ 100A/µs VR ≤ VDSS Tj ≤ 150°C |
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