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APTC80H29T3G Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. APTC80H29T3G
Description  Full - Bridge Super Junction MOSFET Power Module
Download  6 Pages
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTC80H29T3G Datasheet(HTML) 2 Page - Microsemi Corporation

   
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APTC80H29T3G
www.microsemi.com
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 800V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
250
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 7.5A
290
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
2254
Coss
Output Capacitance
1046
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
54
pF
Qg
Total gate Charge
90
Qgs
Gate – Source Charge
11
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 15A
45
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
13
Td(off)
Turn-off Delay Time
83
Tf
Fall Time
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 15A
RG = 5Ω
35
ns
Eon
Turn-on Switching Energy
243
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5Ω
139
µJ
Eon
Turn-on Switching Energy
425
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5Ω
171
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
15
IS
Continuous Source current
(Body diode)
Tc = 80°C
11
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 15A
1.2
V
dv/dt
Peak Diode Recovery
6
V/ns
trr
Reverse Recovery Time
Tj = 25°C
550
ns
Qrr
Reverse Recovery Charge
IS = - 15A
VR = 400V
diS/dt = 100A/µs
Tj = 25°C
15
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 15A
di/dt
≤ 100A/µs
VR ≤ VDSS
Tj ≤ 150°C


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