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APTC80H29T3G Datasheet(PDF) 6 Page - Microsemi Corporation

Part No. APTC80H29T3G
Description  Full - Bridge Super Junction MOSFET Power Module
Download  6 Pages
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTC80H29T3G Datasheet(HTML) 6 Page - Microsemi Corporation

   
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APTC80H29T3G
www.microsemi.com
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
5
10152025
ID, Drain Current (A)
VDS=533V
RG=5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
5
101520
25
ID, Drain Current (A)
VDS=533V
RG=5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
100
200
300
400
500
600
700
800
5
1015
2025
ID, Drain Current (A)
VDS=533V
RG=5Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
250
500
750
1000
1250
0
1020
3040
50
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=533V
ID=15A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
46
8
10
12
14
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=533V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2
0.6
1
1.4
1.8
V
SD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.


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